Simulation of doping and primary radiation damage to the SiC(111) surface under bombardment by Si (N) atomic and cluster ions (N=1, 5, and 60) using classical molecular dynamics

A. Bakaev, E. Zhurkin
JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES
5 2, 249-255
2011
A1
Published while none of the authors were employed at the CMM

Abstract 

The features of the cascade of atomic collisions, the spatial distribution of dopes, and primary radiation damage in a near-surface region of cubic silicon carbide under bombardment by Si (N) ions and clusters (N = 1, 5, and 60) in the case of the same energy per one atom of the particle-projectile (200 and 1000 eV/atom) are studied in this paper. The study is carried out using classical molecular dynamics. As a result, several features of the low-energy implantation of polyatomic clusters in SiC(111) are revealed, namely, a relatively weak effect of the size of the implanted cluster on the distribution of ranges of incorporated atoms, a low degree of nonlinear effects at the cascade and postcascade stages, and formation of amorphous regions in the target during cluster implantation.